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| Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R HBD195 APPLICATIONS . .Medium Power Amplifie. ABSOLUTE MAXIMUM RATINGSTa=25 Tstg----Storage Temperature.............................. -55~150 Tj----Junction Temperature.................................... 150 PC----Collector DissipationTc=25........................ 10W PC----Collector Dissipation A=25 T ........................ 1.5W VCBO ----Collector-Base Voltage.............................. 50V VCES ----Collector-Emitter Voltage........................... 40V VCEO ----Collector-Emitter Voltage........................... 20V VEBO ----Emitter-Base Voltage.................................... 8V ICP----Collector CurrentPulse................................. 10A IC----Collector Current DC ....................................... 5A Ib----Base Current...................................................1A 1EmitterE 2CollectorC 3BaseB TO-126ML ELECTRICAL CHARACTERISTICSTa=25 Symbol Characteristics Min Typ Max Unit Test Conditions BVCEO ICBO IEBO HFE1 HFE2 VCE(sat) VBE fT Cob Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage Base-Emitter Voltage Current Gain-Bandwidth Product Output Capacitance 20 100 100 140 70 1 1.5 100 40 600 V nA nA IC=10mA, IB=0 VCB=40V, IE=0 VEB=8V, IC=0 VCE=2V, IC=0.5A VCE=2V, IC=5A V V MHz pF IC=6A, IB=0.15A VCE=2V, IC=4A VCE=2V,IC=500mA VCB=10V, IE=0f=1MHz Pulse TestPW=10Msmax,Duty Cycle=30%min hFE Classification Y 140--240 GR 200--400 BL 300--600 Shantou Huashan Electronic Devices Co.,Ltd. N P N S I L I C O N T RAN S I S T O R HBD195 |
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